KSP5179

KSP5179 KSP5179 High Frequency Transistor 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Derate above 25°C Collector Power Dissipation (TC=25°C) Derate above 25°C Junction Temperature Storage Temperature Value 20 12 2.5 50 200 1.6 300 2.4 150 -55 ~ 150 Units V V V mA mW mW/°C mW mW/°C °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol VCEO (sus) BVCBO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob hfe Cc ⋅ rbb’ NF Parameter Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain Collector Base Time Constant Noise Figure Test Condition IC=3mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Ta=150°C VCB=1V, IC=3mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=6V, IC=5mA VCB=10V, IE=0, f=0.1 to1 MHz VCE=6V, IC=2mA, f=1KHz VCE=6V, IE=2mA, f=31.9MHz VCE=6V, IC=1.5mA, f=200MHz RS=50Ω 25 3 900 25 Min. 12 20 2.5 0.02 1 250 0.4 1 2000 1 300 14 4.5 ps dB V V MHz pF Max. Units V V V µA µA ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSP5179 Package Dimensio...