KSP62

KSP62/63/64 KSP62/63/64 Darlington Transistor Collector-Emitter Voltage: VCES=KSP62: 20V KSP63/64: 30V Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP62 : KSP63/64 VCEO Collector-Emitter Voltage : KSP62 : KSP63/64 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -20 -30 -10 -500 625 150 -55~150 V V V mA mW °C °C -20 -30 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES Parameter Collector-Emitter Breakdown Voltage : KSP62 : KSP63/64 Collector Cut-off Current : KSP62 : KSP63/64 IEBO hFE Emitter Cut-off Current * DC Current Gain : KSP62 : KSP63 : KSP64 : KSP63 : KSP64 VCE (sat) * Collector-Emitter Saturation Voltage : KSP62 : KSP63/64 * Base-Emitter On Voltage : KSP62 : KSP63/64 Current Gain Bandwidth Product : KSP63/64 VCE= -5V, IC= -10mA 20K 5K 10K 10K 20K -1.0 -1.5 -1.4 -2 125 V V V V MHz VCB= -15V, IE=0 VCB= -30V, IE=0 VBE= -10V, IC=0 -100 -100 -100 nA nA nA Test Condition IC= -100µA, IB=0 Min. -20 -30 Max. Units V V ICBO VCE= -5V, IC= -100mA IC= -10mA, IB= -0.01mA IC= -100mA, IB= -0.1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA VCE= -5V, IC= -100mA f=100MHz VBE (on) fT * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, Sept...