KSP76

KSP75/76/77 KSP75/76/77 Darlington Transistor Collector-Emitter Voltage: VCES= KSP75: 40V KSP76: 50V KSP77: 60V Collector Power Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage : KSP75 : KSP76 : KSP77 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -40 -50 -60 -10 -500 625 150 -55~150 V V V V mA mW °C °C Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Collector Cut-off Current : KSP75 : KSP76 : KSP77 IEBO ICES Emitter Cut-off Current Collector Cut-off Current : KSP75 : KSP76 : KSP77 hFE VCE (sat) VBE (on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE= -30V, IE=0 VCE= -40V, IE=0 VCE= -50V, IE=0 VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -0.1mA VCE= -5V, IC= -100mA 10K 10K -1.5 2 V V -500 -500 -500 nA nA nA VCE= -30V, IE=0 VCE= -40V, IE=0 VCE= -50V, IE=0 VCE= -10V, IB=0 -100 -100 -100 -100 Test Condition IC= -100µA, IB=0 Min. -40 -50 -60 IC= -100µA, IE=0 -40 -50 -60 V V V nA nA nA nA nA Max. Units V V V BVCBO ICBO ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP75/76/77 Typical Characteristics VBE(sat), V...