Document
KSP8598/8599
KSP8598/8599
Amplifier Transistor
• Collector-Emitter Voltage: VCEO= KSP8598: 60V KSP8599: 80V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP8598 : KSP8599 VCEO Collector-Emitter Voltage : KSP8598 : KSP8599 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
1. Emitter 2. Base 3. Collector
Value -60 -80 -60 -80 -5 -500 625 150 -55 ~ 150
Units V V V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8598 : KSP8599 * Collector-Emitter Breakdown Voltage : KSP8598 : KSP8599 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP8598 : KSP8599 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100µA, IE=0 Min. -60 -80 IC= -10mA, IB=0 -60 -80 IE= -10µA, IC=0 VCB= -60V, IE=0 VCB= -80V, IE=0 VCE= -60V, IB=0 VEB= -4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -5mA IC= -100mA, IB= -10mA VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz VCB= -5V, IE=0 f=1MHz -0.5 -0.6 150 8 100 100 75 -5 -100 -100 -100 -100 300 V V V nA nA nA nA Max. Units V V
BVCEO
BVEBO ICBO
ICEO IEBO hFE
VCE (sat) VBE (on)
* Collector-Emitter Saturation Voltage * Base-Emitter On Voltage : KSP8598 : KSP8599 Current Gain Bandwidth Product Output Capacitance
-0.4 -0.3 -0.7 -0.8
V V V V MHz pF
fT Cob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP8598/8599
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
IC = 10 IB
VCE = -5V
hFE, DC CURRENT GAIN
-1
V BE(sat)
100
-0.1
VCE(sat)
10 -1 -10 -100 -1000
-0.01 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
100
1000
IE = 0 f = 1MHz
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VCE = -5V
Cob [pF], CAPACITANCE
10
100
1 -0.1
10 -1 -10 -100
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP8598/8599
Package Demensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
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