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KSP8599 Dataheets PDF



Part Number KSP8599
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Amplifier Transistor
Datasheet KSP8599 DatasheetKSP8599 Datasheet (PDF)

KSP8598/8599 KSP8598/8599 Amplifier Transistor • Collector-Emitter Voltage: VCEO= KSP8598: 60V KSP8599: 80V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP8598 : KSP8599 VCEO Collector-Emitter Voltage : KSP8598 : KSP8599 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current C.

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KSP8598/8599 KSP8598/8599 Amplifier Transistor • Collector-Emitter Voltage: VCEO= KSP8598: 60V KSP8599: 80V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP8598 : KSP8599 VCEO Collector-Emitter Voltage : KSP8598 : KSP8599 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 1. Emitter 2. Base 3. Collector Value -60 -80 -60 -80 -5 -500 625 150 -55 ~ 150 Units V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8598 : KSP8599 * Collector-Emitter Breakdown Voltage : KSP8598 : KSP8599 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP8598 : KSP8599 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100µA, IE=0 Min. -60 -80 IC= -10mA, IB=0 -60 -80 IE= -10µA, IC=0 VCB= -60V, IE=0 VCB= -80V, IE=0 VCE= -60V, IB=0 VEB= -4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -5mA IC= -100mA, IB= -10mA VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz VCB= -5V, IE=0 f=1MHz -0.5 -0.6 150 8 100 100 75 -5 -100 -100 -100 -100 300 V V V nA nA nA nA Max. Units V V BVCEO BVEBO ICBO ICEO IEBO hFE VCE (sat) VBE (on) * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage : KSP8598 : KSP8599 Current Gain Bandwidth Product Output Capacitance -0.4 -0.3 -0.7 -0.8 V V V V MHz pF fT Cob * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP8598/8599 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 IC = 10 IB VCE = -5V hFE, DC CURRENT GAIN -1 V BE(sat) 100 -0.1 VCE(sat) 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 1000 IE = 0 f = 1MHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VCE = -5V Cob [pF], CAPACITANCE 10 100 1 -0.1 10 -1 -10 -100 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP8598/8599 Package Demensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list .


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