KSP94
KSP94
High Voltage Transistor
• High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Vo...
KSP94
KSP94
High Voltage
Transistor
High Collector-Emitter Voltage: VCEO= -400V Low Collector-Emitter Saturation Voltage Complement to KSP44
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -400 -400 -6 -300 625 150 -55~150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCES BVEBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE (sat)1 VCE (sat)2 VBE (sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -100µA, VBE=0 IE= -10µA, IC=0 VCB= -300V, VE=0 VCE= -400V, VBE=0V VBE= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA VCB= -20V, IE=0, f=1MHz 7 40 50 45 40 Min. -400 -400 -6 -100 -1 -100 300 Typ. Max. Units V V V nA µA nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance
-500 -750 -750
mV mV mV pF
©2002 Fairchild Semiconductor Corporation
Rev. A2, July 2002
KSP94
Typical Characteristics
1000
-10
VBE(s...