KSR2004

KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Ï Ï Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR1004 ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG -50 -50 -10 -100 300 150 -55 ~ 150 Unit V V V mA mÎÎW TO-92 1. Emitter 2. Collector 3. Base ÎELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT COB VI(off) VI(on) R1 R1/R2 Test Conditions ÀIC= -10 , IE=...