KST05

KST05/06 KST05/06 Driver Transistor Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V Collector Power Dissipation: PC (max) = 350mW Complement to KST55/56 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collecto-Base Voltage : KST05 : KST06 VCEO Collector-Emitter Voltage : KST05 : KST06 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient 60 80 4 500 350 150 357 V V V mA mW °C °C/W 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter * Collector-Emitter Breakdown Voltage : KST05 : KST06 Emitter-Base Breakdown Voltage Collector Cut-off Current : KST05 : KST06 ICEO hFE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=100mA, f=100MHz 100 50 50 0.25 1.2 V V MHz Min. 60 80 4 0.1 0.1 0.1 Max. Units V V V µA µA µA BVEBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking Code Type Mark KST05 1H KST06 1G Marking 1H Rev. A2, November 2002 ©2002 Fairchild Semiconductor Corporation KST05/06 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0...