KST24

KST24 KST24 VHF Mixer Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance Junction to Ambient Value 40 30 4 100 350 150 357 Units V V V mA mW °C °C/W Refer to KSP24 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE fT Cob GG Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * Current Gain Bandwidth Product Output Capacitance Conversion Gain (213MHz to 45MHz) (60MHz to 45MHz) Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VCE=10V, IC=8mA VCE=10V, IC=8mA f=100MHz VCB=10V, IE=0, f=1MHz IC=8mA, VCC=20V Oscillator Injection=150mV 19 24 30 400 620 0.25 24 29 0.36 MHz pF dB dB Min. 40 30 4 50 Typ. Max. Units V V V nA * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking 3A ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST24 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Co...