KST2484

KST2484 KST2484 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 60 60 6 50 350 150 Units V V V mA mW °C Refer to KSP5088 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figure Test Condition IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=45V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA IC=1mA, IB=0.1mA IC=1mA, VCE=5V VCB=5.0V, IE=0, f=1MHz, IC=10µA, VCE=5V RS=10KΩ, f=1KHz 250 800 0.35 0.95 6 3 V V pF dB Min. 60 60 5 10 10 Max. Units V V V nA nA Marking 1U ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST2484 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMA...