KST2907A

KST2907A KST2907A General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -60 -60 -5 -600 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -10µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -50V, IE=0 VCE= -10V, IC= -0.1mA VCE= -10V, IC= -1.0mA VCE= -10V, IC= -10mA *VCE= -10V, IC= -150mA *VCE= -10V, IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -50mA, VCE= -20V f=100MHz VCB= -10V, IE=0, f=1.0MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 8 50 110 75 100 100 100 50 Min. -60 -60 -5 -0.01 Max. Units V V V µA 300 -0.4 -1.6 -1.3 -2.6 V V V V MHz pF ns ns VCE (sat) VBE (sat) fT Cob tON tOFF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking 2F ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST2907A T...