KST4124

KST4124 KST4124 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 30 25 5 200 350 150 Units V V V mA mW °C Refer to KST3904 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC=10µA, IE=0 IC=1.0mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=2mA VCE=1V, IC=50mA IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA IC=10mA, VCE=20V f=100MHz VCB=5V, IE=0, f=1.0MHz IC=100µA, VCE=5V RS=1KΩ f=10Hz to 15.7KHz 300 4 5 120 60 Min. 30 25 5 50 50 360 0.3 0.95 V V MHz pF dB Max. Units V V V nA nA * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking ZC ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST4124 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±...