KST4401

KST4401 KST4401 Switching Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Value 60 40 6 600 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO IBEV ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current * DC Current Gain Test Condition IC=100µA, IE=0 IC=1.0mA, IB=0 IE=100µA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=20mA, VCE=10V f=100MHz VCB=5V, IE=0, f=100KHz VCC=30V, VBE=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA 0.75 250 6.5 35 255 20 40 80 100 40 Min. 60 40 6 100 100 Max. Units V V V nA nA 300 0.4 0.75 0.95 1.2 V V V V MHz pF ns ns VCE (sat) VBE (sat) fT Cob tON tOFF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 2X ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST4401 Typical Characte...