KST4403

KST4403 KST4403 Switching Transistor 3 2 1 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 1. Base 2. Emitter 3. Collector Value -40 -40 -5 -600 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO IBEV ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain Test Condition IC= -0.1mA, IE=0 IC= -1.0mA, IB=0 IE= -0.1mA, IC=0 VCE= -35V, VBE= -0.4V VCE= -35V, VBE= -0.4V VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1.0mA VCE= -1V, IC= -10mA *VCE= -2V, IC= -150mA *VCE= -2V, IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -20mA, VCE= -10V f=100MHz VCB= -10V, IE=0 f=140KHz VCC= -30V, VBE= -2V IC= -150mA, IB1= -15mA VCC= -30V, IC= -150mA IB1=IB2= -15mA Marking -0.75 200 8.5 35 255 30 60 100 100 20 Min. -40 -40 -5 -0.1 -0.1 Max. Units V V V µA µA 300 -0.4 -0.75 -0.95 -1.3 V V V V MHz pF ns ns VCE (sat) VBE (sat) fT Cob tON tOFF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ...