KST5179
KST5179
RF Amplifier Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transist...
KST5179
KST5179
RF Amplifier
Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Derate above 25°C Junction Temperature Storage Temperature Value 20 12 2.5 50 350 2.8 150 -55 ~ 150 Units V V V mA mW mW/°C °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob hfe NF GPE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain Noise Figure Power Gain Test Condition IC=0.01mA, IE=0 IC=3mA, IB=0 IE=0.01mA, IC=0 VCB=15V, IE=0 VCE=1V, IC=3mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=6V, IC=5mA, f=100MHz VCB=10V, IE=0, f=0.1MHz to 1MHz VCE=6V, IC=2mA, f=1KHz VCE=6V, IC=1.5mA, f=200MHz RS=50Ω VCE=6V, IC=5mA, f=200MHz 15 25 4.5 dB dB 900 1 25 0.4 1 V V MHz pF Min. 20 12 2.5 0.02 Max. Units V V V µA
Marking
7H
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST5179
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
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