KST5401

KST5401 KST5401 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -160 -150 -5 -500 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -1.0mA, IB=0 IE= -10µA, IC=0 VCB= -100V, IE=0 VCE= -5V, IC= -1.0mA VCE= -5V, IC= -10mA VCE= -5V, IC= -50mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -10V f=100MHz VCB= -10V, IE=0, f=1.0MHz VCE= -5V, IC= -200µA RS=10KΩ, f=10Hz to 15.7KHz 100 50 60 50 Min. -160 -150 -5 -50 240 -0.2 -0.5 -1.0 -1.0 300 6.0 8.0 V V V V MHz pF dB Max. Units V V V nA VCE (sat) VBE (sat) fT Cob NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Marking 2L ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5401 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 IC = 10 IB hFE, DC CURRENT GAIN VCE = -5V -1 V BE(sat) 100 -0.1 V...