KST55

KST55/56 KST55/56 Driver Transistor Collector-Emitter Voltage: VCEO = KST55: - 60V KST56: - 80V Collector Power Dissipation: PC (max) = 350mW Complement to KST05/06 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KST55 : KST56 VCEO Collector-Emitter Voltage : KST55 : KST56 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient -60 -80 -4 -500 350 150 357 V V V mA mW °C °C/W -60 -80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter * Collector-Emitter Breakdown Voltage : KST55 : KST56 * Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current : KST55 : KST56 hFE VCE (sat) VBE (on) fT DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE= -60V, IB=0 VCE= -80V, IB=0 VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -100mA, IB= -10mA VCE= -1V, IC= -100mA VCE= -1V, IC= -100mA f=100MHz 50 50 50 -0.25 -1.2 V V MHz -0.1 -0.1 µA µA Test Condition IC= -1mA, IB=0 IE= -100µA, IC=0 VCB= -60V, IE=0 Min. -60 -80 -4 -0.1 Max. Units V V V µA BVEBO ICBO ICEO * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking Marking Code Type Mark KST55 2H KST56 2G 2H Rev. A2, November 2002 ©2002 Fairchild Semiconductor Corporation KST55/56 Packag...