KST5550

KST5550 KST5550 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 160 140 6 600 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1.0mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, VCE=10V f=100MHz VCB=10V, IE=0, f=1.0MHz Marking 100 60 60 20 Min. 160 140 6 100 50 250 0.15 0.25 1.0 1.2 300 6.0 V V V V MHz pF Max. Units V V V nA nA VCE (sat) VBE (sat) fT Cob Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance 1F ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5550 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 5V IC = 10 IB hFE, DC CURRENT GAIN 100 1 V BE(sat) 10 0.1 VCE (sat) 1 1 10 100 1000 0.01 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], ...