KST63

KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -30 -30 -10 -500 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KST63 : KST64 : KST63 : K ST64 VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -0.1mA VCE= -5V, IC= -100mA VCE= -5V, IC= -10mA f=100MHz 125 5K 10K 10K 20K -1.5 -2.0 V V MHz Test Condition IC= -100, VBE=0 VCE= -30V, IE=0 VEB= -10V, IC=0 Min. -30 Max. -100 -100 Units V nA nA * Pulse test: PW≤300µs, Duty Cycle≤2% Marking Code Type Mark KST63 2U KST64 2V Marking 2U ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST63/64 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000k -10 VCE = -5V IC = 1000 IB V BE(sat) hFE, DC CURRENT GAIN 100k -1 VCE(sat) 10k -0.1 1k -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter...