KST93

KST92/93 KST92/93 High Voltage Transistor 3 2 1 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KST92 : KST93 VCEO Collector-Emitter Voltage : KST92 : KST93 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient 1. Base 2. Emitter 3. Collector Value -300 -200 -300 -200 -5 -500 350 150 357 Units V V V V V mA mW °C °C/W Refer to KSP92/93 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KST92 : KST93 * Collector-Emitter Breakdown Voltage : KST92 : KST93 Emitter-Base Breakdown Voltage Collector Cut-off Current : KST92 : KST93 Emitter Cut-off Current * DC Current Gain Test Condition IC= -100µA, IE=0 Min. -300 -200 IC= -1mA, IB=0 -300 -200 IE= -100µA, IC=0 VCB= -200V, IE=0 VCB= -160V, IE=0 VEB= -5V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA IC= -20mA, IB= -2mA IC= -20mA, IB= -2mA VCB= -20V, IE=0 f=1MHz VCE= -20V, IC= -10mA f=100MHz 50 25 40 25 -0.5 -0.9 6 8 V V pF pF MHz -5 -0.25 -0.25 -0.1 V V V µA µA µA Max. Units V V BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance : KST92 : KST93 fT Current Gain Bandwidth Product * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2003 Fairchild Semiconducto...