ISL9K8120P3

ISL9K8120P3 May 2002 ISL9K8120P3 8A, 1200V Stealth™ Dual Diode General Description The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49413. Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5 Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Avalanche Energy Rated Applications Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Package JEDEC TO-220AB Symbol K ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE) A1 A2 Device Maximum Ratings (per leg) TC = 25°C unless otherwise no...