ISL9N303AS3

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 3.2mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.0026Ω (Typ), VGS = 10V rDS(ON) = 0.004Ω (Typ), VGS = 4.5V Qg (Typ) = 61nC, VGS = 5V Qgd (Typ) = 17nC CISS (Typ) = 7000pF Applications DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE G DRAIN (FLANGE) D TO-220AB TO-263AB TO-262AB S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above Operating and Storage Temperature 75 75 25 Figure 4 215 1.43 -55 to 175 W W/oC o Ratings 30 ±20 Units V V A A A C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.7 62 43 oC/W o o ...