ISL9N304AS3ST

ISL9N304AP3/ISL9N304AS3ST February 2002 PWM Optimized ISL9N304AP3/ISL9N304AS3ST N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 4.5mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.0036Ω (Typ), VGS = 10V rDS(ON) = 0.0060Ω (Typ), VGS = 4.5V Qg (Typ) = 38nC, VGS = 5V Qgd (Typ) = 13nC CISS (Typ) = 4075pF Applications DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE SOURCE DRAIN (FLANGE) G S TO-263 Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) TO-220 Ratings 30 ±20 75 74 20 Figure 4 145 0.97 -55 to 175 Units V V A A A A W W/oC o MOSFET Maximum Ratings TA = 25°C unless otherwise noted Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.03 62 43 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking N304AS N304AP Device ISL...