N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
ISL9N304AP3/ISL9N304AS3ST
February 2002
PWM Optimized
ISL9N304AP3/ISL9N304AS3ST
N-Channel Logic Level UltraFET® Trenc...
Description
ISL9N304AP3/ISL9N304AS3ST
February 2002
PWM Optimized
ISL9N304AP3/ISL9N304AS3ST
N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 4.5mΩ
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
Fast switching rDS(ON) = 0.0036Ω (Typ), VGS = 10V rDS(ON) = 0.0060Ω (Typ), VGS = 4.5V Qg (Typ) = 38nC, VGS = 5V Qgd (Typ) = 13nC CISS (Typ) = 4075pF
Applications
DC/DC converters
DRAIN (FLANGE)
SOURCE DRAIN GATE D
GATE SOURCE DRAIN (FLANGE)
G S
TO-263
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V)
TO-220
Ratings 30 ±20 75 74 20 Figure 4 145 0.97 -55 to 175 Units V V A A A A W W/oC
o
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature
C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.03 62 43
o
C/W C/W
oC/W o
Package Marking and Ordering Information
Device Marking N304AS N304AP Device ISL...
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