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ISL9N306AD3ST Dataheets PDF



Part Number ISL9N306AD3ST
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m
Datasheet ISL9N306AD3ST DatasheetISL9N306AD3ST Datasheet (PDF)

ISL9N306AD3 / ISL9N306AD3ST June 2003 ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0052Ω (T.

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ISL9N306AD3 / ISL9N306AD3ST June 2003 ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0052Ω (Typ), V GS = 10V • rDS(ON) = 0.0085Ω (Typ), V GS = 4.5V • Qg (Typ) = 30nC, VGS = 5V • Qgd (Typ) = 11nC • CISS (Typ) = 3400pF SOURCE DRAIN DRAIN (FLANGE) GATE G S Applications • DC/DC converters DRAIN (FLANGE) D GATE SOURCE TO-252 TO-251 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = V, Rθ JC = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 50 50 16 Figure 4 125 0.83 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 1.2 100 52 o o o C/W C/W C/W Package Marking and Ordering Information Device Marking N306AD N306AD Device ISL9N306AD3ST ISL9N306AD3 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units ©2003 Fairchild Semiconductor Corporation ISL9N306AD3 / ISL9N306AD3ST Rev. B2 ISL9N306AD3 / ISL9N306AD3ST Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150o 30 1 250 ±100 V µA nA On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 50A, VGS = 10V ID = 50A, VGS = 4.5V 1 3 V Ω 0.0052 0.0060 0.0085 0.0095 Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V V = 15V DD VGS = 0V to 1V ID = 50A Ig = 1.0mA 3400 650 300 60 30 3.0 10 11 90 45 4.5 pF pF pF nC nC nC nC nC Switching Characteristics (VGS = 4.5V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 16A VGS = 4.5V, RGS = 4.3Ω 16 70 34 30 131 97 ns ns ns ns ns ns Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 16A VGS = 10V, R GS = 4.3Ω 10 43 62 29 80 137 ns ns ns ns ns ns Unclamped Inductive Switching tAV Avalanche Time ID = 30A, L = 200µH 428 µs Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 50A ISD = 25A ISD = 50A, dISD /dt = 100A/µs ISD = 50A, dISD /dt = 100A/µs 1.25 1.0 35 30 V V ns nC ©2003 Fairchild Semiconductor Corporation ISL9N306AD3 / ISL9N306AD3ST Rev. B2 ISL9N306AD3 / ISL9N306AD3ST Typical Characteristic 1.2 60 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 50 VGS = 10V 40 VGS = 4.5V 30 0.8 0.6 0.4 20 0.2 10 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature ZθJC, NORMALIZED THERMAL IMPEDANCE PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101 0.01 10-5 10-4 10-3 Figure 3. Normalized Maximum transient Thermal Impedance 2000 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 – TC 150 IDM , PEAK CURRENT (A) 1000 VGS = 5V 100 40 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101 10 -5 Figure 4. Peak Current Capability ©2003 Fairchild Semiconductor Corporation ISL9N306AD3 / ISL9N306AD3ST Rev. B2 ISL9N306AD3 / ISL9N306AD3ST Typical Characteristic (Continued) 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) 100 VGS = 10V 75 VGS = 4.5V VGS = 3.5V ID , DRAIN CURRENT (A) 75 50 TJ = 175oC 25 TJ = 25oC 0 1 2 3 4 5 TJ = -55oC 50 VGS = 3V 25 TC = 25 oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MA.


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