N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m
ISL9N308AD3 / ISL9N308AD3ST
June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trenc...
Description
ISL9N308AD3 / ISL9N308AD3ST
June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trench Power MOSFETs 30V, 50A, 8mΩ
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
Fast switching rDS(ON) = 0.0064Ω (Typ), VGS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 4.5V Qg (Typ) = 24nC, VGS = 5V Qgd (Typ) = 8nC CISS (Typ) = 2600pF
Applications
DC/DC converters
D G
G
D
S
D-PAK TO-252 (TO-252)
I-PAK (TO-251AA) G D S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Note 1 ID Continuous (TC = 100oC, VGS = 4.5V) Note 1 Continuous (TC = 25oC, VGS = 10V, RθJC = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 50 48 14 Figure 4 100 0.67 -55 to 175 A A A A W W/oC
o
Ratings 30 ±20
Units V V
C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.5 100 52
oC/W o o
C/W C/W
Package Marking and Ordering Information
Device Marking N308AD N308AD Device ISL9N3...
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