ISL9N310AS3ST

ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 January 2002 ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.008Ω (Typ), VGS = 10V rDS(ON) = 0.0115Ω (Typ), VGS = 4.5V Qg (Typ) = 17nC, VGS = 5V Qgd (Typ) = 5.4nC CISS (Typ) = 1800pF SOURCE DRAIN GATE D Applications DC/DC converters DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE G DRAIN (FLANGE) S TO-220AB TO-262AA MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 ±20 62 36 13.5 Figure 4 70 0.47 -55 to 175 Units V V A A A A W W/oC oC TO-263AB ID PD TJ, TSTG Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 2.14 62 43 oC/W oC/W oC/W Package M...