ISL9N322AD3ST

ISL9N322AD3ST January 2002 PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET® Trench MOSFET 30V, 20A, 0.022Ω General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.018Ω (Typ), VGS = 10V rDS(ON) = 0.028Ω (Typ), VGS = 4.5V Qg (Typ) = 9nC, VGS = 5V Qgd (Typ) =3nC CISS (Typ) =970pF Applications DC/DC converters DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RθJA=52oC) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 ±20 20 20 8 Figure 4 50 0.33 -55 to 175 Units V V A A A A W W/oC oC ID PD TJ, TSTG Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 3 100 52 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking N322AD Device ISL9N322AD3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units ©2002 Fairchild Semiconductor ...