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ISL9R18120G2 Dataheets PDF



Part Number ISL9R18120G2
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 18A 1200V Stealth Diode
Datasheet ISL9R18120G2 DatasheetISL9R18120G2 Datasheet (PDF)

ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S May 2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in.

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ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S May 2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49414. Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package 2 LEAD TO-247 ANODE CATHODE Symbol JEDEC TO-220AC ANODE CATHODE JEDEC TO-263AB K CATHODE (FLANGE) N/C ANODE CATHODE (FLANGE) A CATHODE (BOTTOM SIDE METAL) Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 92oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 1200 1200 1200 18 36 200 125 20 -55 to 150 300 260 Units V V V A A A W mJ °C °C °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Package Marking and Ordering Information Device Marking R18120G2 R18120P2 R18120S3S Device ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S Package TO-247 TO-220AC TO-263AB Tape Width N/A N/A 24mm Quantity 30 50 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Condi.


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