|
|
SCHOTTKY RECTIFIER. 12TQ045S Datasheet |
|
|
|
Bulletin PD-20239 rev. B 12/01
SCHOTTKY RECTIFIER
12TQ...
12TQ...S
15 Amp
IF(AV) = 15Amp
VR = 35 to 45V
Major Ratings and Characteristics
Characteristics
12TQ Units
IF(AV) Rectangular
waveform
VRRM range
IFSM @ tp = 5 µs sine
VF @15 Apk, TJ = 125°C
15
35 to 45
990
0.50
TJ range
- 55 to 150
A
V
A
V
°C
Description/ Features
The 12TQ... Schottky rectifier series has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150° C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
150° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
12TQ...
Case Styles
12TQ... S
Base
Cathode
2
www.irf.com
13
Cathode
Anode
TO-220AC
Base
Cathode
2
13
N/C Anode
D2PAK
1
|
12TQ... Series
Bulletin PD-20239 rev. B 12/01
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
12TQ035
35
12TQ040
40
12TQ045
45
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
EAS Non-RepetitiveAvalancheEnergy
IAR RepetitiveAvalancheCurrent
12TQ
15
990
250
16
2.4
Units
Conditions
A 50% duty cycle @ TC = 120° C, rectangular wave form
A 5µs Sine or 3µs Rect. pulse
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
mJ TJ= 25 °C, IAS= 2 .4 Amps, L = 5.5 mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
12TQ
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
0.56
0.71
0.50
0.64
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
1.75
70
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
900
8.0
10000
Thermal-Mechanical Specifications
Units
Conditions
V @ 15A
V @ 30A
V @ 15A
V @ 30A
TJ = 25 °C
TJ = 125 °C
mA
mA
pF
nH
V/ µs
TJ = 25 °C
TJ = 125 °C
VR = rated VR
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
Parameters
12TQ Units
Conditions
TJ Max. Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
to Case
-55 to 150 °C
-55 to 150 °C
2.0 °C/W DCoperation * See Fig. 4
RthCS Typical Thermal Resistance, Case to
Heatsink
0.50
°C/W Mounting surface, smooth and greased
wt ApproximateWeight
2 (0.07) g (oz.)
T MountingTorque
Min.
Max.
6 (5) Kg-cm
12 (10) (Ibf-in)
2 www.irf.com
|
1000
100
10
1
TJ=150°C
TJ=125°C
TJ= 25°C
12TQ... Series
Bulletin PD-20239 rev. B 12/01
1000
100
10
1
.1
.01
TJ=150°C
125°C
100°C
75°C
50°C
25°C
.001
0 5 10 15 20 25 30 35 40 45
ReverseVoltage- VR(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1000
TJ=25°C
.1
0 .2 .4 .6 .8 1 1.2 1.4 1.6 1.8
ForwardVoltageDrop- VFM(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
100
0
10 20 30 40 50
ReverseVoltage- VR(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
D=0.50
1 D=0.33
D=0.25
D=0.17
.1 D=0.08
.01
.001
.00001
SinglePulse
(Thermal Resistance)
.0001
.001
.01
PDM
t1
t2
Notes:
1. DutyfactorD= t1/ t2
2. PeakTJ=PDMxZthJC+TC
.1 1 10 100
t1, RectangularPulseDuration(Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |