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IW4093B

ETC

Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS

TECHNICAL DATA IW4093B Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS The IW4093B consists of four ...


ETC

IW4093B

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TECHNICAL DATA IW4093B Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS The IW4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and negative- going signals. The difference between the positive voltage (VP) and the negative voltage (VN) is defined as hysteresis voltage (VH) (see Fig.1). Operating Voltage Range: 3.0 to 18 V Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supply ORDERING INFORMATION IW4093BN Plastic IW4093BD SOIC TA = -55° to 125° C for all packages LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE Inputs A L PIN 14 =VCC PIN 7 = GND L H H B L H L H Output Y H H H L 142 IW4093B MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN PD PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Power Dissipation per Output Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +20 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±10 750 500 100 -65 to +150 260 Unit V V V mA mW mW °C °C Maximum Ratings are those values beyond which...




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