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IXBH9N140G Dataheets PDF



Part Number IXBH9N140G
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Datasheet IXBH9N140G DatasheetIXBH9N140G Datasheet (PDF)

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Cont.

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High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms VGE = 10 V, TVJ = 125°C, RG = 27 Ω VCE = 0.8•VCES Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 9N140G 9N160G 1400 1400 1600 1600 ±20 ±30 9 5 10 ICM = 12 100 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • International standard package JEDEC TO-247 AD • Reverse conducting capability C4 Applications • • • • Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts 1.15/10 Nm/lb.in. 6 g Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Advantages 9N140G 9N160G TJ = 25°C TJ = 125°C 1400 1600 3.5 0.1 ± 500 TJ = 125°C 4.9 5.6 7 5.5 100 V V V µA mA nA V V 046 BVCES VGE(th) ICES IGES VCE(sat) IC IC = 0.25 mA, VGE = 0 V = 0.5 mA, VCE = VGE VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density © 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1 -4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXBH 9N140G IXBH 9N160G Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 5 A, VCE = 600 V, VGE = 10 V Inductive load, TJ = 125° C IC = IC90, VGE = 10 V, L = 100 µH, VCE = 960 V, RG = 27 Ω 36 5 34 140 200 120 70 pF pF pF nC ns ns ns ns 1.25 K/W 0.25 K/W Dim. A B C D Millimeter Min. Max. 19.81 20.32 20.80 21.46 Inches Min. Max. 0.780 0.800 0.819 0.845 TO-247 AD Outline Cies Coes Cres Qg td(on) tri td(off) tfi RthJC RthCK 15.75 16.26 0.610 0.640 3.55 3.65 0.140 0.144 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Reverse Conduction Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions min. typ. 3.6 max. 5 E F G H J K L M N Symbol VF IF = IC90, VGE = 0 V 1.5 2.49 C4 © 2000 IXYS All rights reserved 2 -4 IXBH 9N140G IXBH 9N160G 30 TJ = 25°C VGE = 17V 30 15V 13V 11V TJ = 125°C VGE = 17V 15V 13V 11V 9V 25 25 20 9V IC - Amperes 7V IC - Amperes 20 15 10 5 0 7V 15 10 5 0 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics 30 VCE = 20V Fig. 2 Typ. Output Characteristics 30 25 25 IF - Amperes TJ = 25°C IC - Amperes TJ = 125°C TJ = 25°C TJ = 125°C 20 15 10 5 0 4 6 8 10 12 14 20 15 10 5 0 C4 0 2 4 6 8 10 VGE - Volts VF - Volts Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 15 16 14 12 VCE = 600V IC = 5A ICM - Amperes VGE - Volts 10 8 6 4 2 0 0 10 20 30 40 50 10 TJ = 125°C VCEK < VCES 5 IXBH 9N140G IXBH 9N160G 0 0 400 800 1200 1600 QG - nanocoulombs VCE - Volts Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area RBSOA © 2000 IXYS All rights reserved 3 -4 IXBH 9N140G IXBH 9N160G 140 120 VCE = 960V VGE = 10V 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 VCE = 960V VGE = 10V IC = 5A TJ = 125°C 100 80 60 40 IC - Amperes td(off )- nanoseconds tfi - nanoseconds RG = 27Ω TJ = 125°C Rg - Ohms Fig. 7 Typ. Fall Time 10 Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 Single Pulse 0.01 C4 0.001 0.00001 IXBH 9-140/160G 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance © 2000 IXYS All rights reserved 4 -4 .


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