High Voltage BiMOSFETTM IXBH9N160G
Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode MOSFET Transistor
VCES...
High Voltage BiMOSFETTM IXBH9N160G
Monolithic Bipolar MOS
Transistor
N-Channel, Enhancement Mode MOSFET
Transistor
VCES = 1600V IC25 = 9A VCE(sat) 7.0V tfi(typ) = 70ns
TO-247
Symbol
VCES VCGR
VGES VGEM
IC25 IICCM90
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
Continuous Transient
TC = 25°C
TTCC
= 90°C = 25°C, 1ms
CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1600 1600
V V
±20 V ±30 V
9A 5A 10 A
ICM
= 12 1280
A V
100 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C 260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 500A, VCE = VGE
ICES VCE = 0.8 VCES, VGE = 0V TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 5A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max.
1600
V
3.5 5.5 V
100 A 100 A
500 nA
4.9 7.0 V 5.6 V
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON
MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage
Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics
International Standard Package - Reverse Conducting Capabi...
