IXFH12N100

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 V DSS IR D25 DS(on) 1000 V 10 A 1.20 W 1000 V 12 A 1.05 W 1000 V 12.5 A 0.90 W trr £ 250 ns Maximum Ratings TO-247 AD (IXFH) V DSS VDGR VGS VGSM ID25 I DM IAR EAR dv/dt PD TJ TJM T stg TL Md Weight T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, R G = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 1000 V 1000 V ±20 V ±30 V 10N100 10 12N100 12 13N100 12.5 10N100 40 12N100 48 13N100 50 10N100 10 12N100 12 13N100 12.5 30 A A A A TO-204 AA (IXFM) A Package A A unavailable A A mJ G D 5 V/ns G = Gate, S = Source, D = Drain, TAB = Drain 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 3 mA GS D VDS = VGS,...