IXFK73N30Q

HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque (TO-264) PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFX 73N30Q IXFK 73N30Q VDSS = 300 V ID25 = 73 A RDS(on) = 42 mΩ trr ≤ 250 µs PLUS 247TM (IXFX) Maximum Ratings 300 300 ± 20 ± 30 73 292 73 60 2.5 5 500 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 0.4/6 Nm/lb.in. 6 10 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless oth...