IXFK90N30

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 300 300 ± 20 ± 30 90 75 360 90 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM G (TAB) D TO-264 AA (IXFK) G TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C D (TAB) S G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 0.4/6 300 Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 33 mΩ VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power su...