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IXFN150N10 Dataheets PDF



Part Number IXFN150N10
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs
Datasheet IXFN150N10 DatasheetIXFN150N10 Datasheet (PDF)

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £.

  IXFN150N10   IXFN150N10


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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings IXFK IXFN 100 100 ±20 ±30 100  76 560 75 30 5 500 100 100 ±20 ±30 150 560 75 30 5 520 150 -55 ... +150 V V V V A A A A mJ V/ns W °C °C °C °C V~ V~ G S S S D D G G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 ... +150 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 300 0.9/6 10 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier q q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±200 TJ = 25°C TJ = 125°C 400 2 12 V V nA mA mA mW VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q VGS = 10 V, ID = 75 A Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages Easy to mount Space savings High power density q q q IXYS reserves the right to change limits, test conditions, and dimensions. 92803G(8/96) © 2000 IXYS All rights reserved 1-4 IXFK 100N10 IXFN 150N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 1800 30 VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A RG = 1 W (External), 60 100 60 360 VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A 75 180 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 TO-264 AA Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK VDS = 10 V; ID = 50 A, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25 A -di/dt = 100 A/ms, VR = 50 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IXFK 100 IXFN 150 IXFK 100 IXFN 150 100 150 400 600 1.75 150 0.6 8 200 A A A A V ns mC A miniBLOC, SOT-227 B IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 100N10 IXFN 150N10 Fig. 1 Output Characteristics 400 TJ = 25°C VGS = 10V 9V Fig. 2 Input Admittance 300 250 350 300 ID - Amperes 250 8V ID - Amperes 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 TJ = 125°C TJ = 125°C 200 150 100 50 7V 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.4 TJ = 25°C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.00 1.75 1.3 RDS(on) - Normalized 1.2 1.1 1.0 VGS = 15V VGS = 10V RDS(on) - Normalized 1..


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