IXFN170N10

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N10 IXFK170N10 100V 100V TO-264 AA (IXFK) Maximum Ratings IXFK IXFN 170N10 170N10 100 100 ±20 ±30 170ƒ 76 680 170 60 5 560 -55 ... +150°C 150 -55 ... +150°C 100 100 ±20 ±30 170 NA 680 170 60 5 V V V V A A A mJ S G D S VDSS VDGR VGS VGSM ID25 ID125„ IDM‚ IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight T J = 25°C to 150°C T J = 25°C to 150°C Continuous Transient TC = 25°C TC = 125°C T C = 25 ° C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G V/ns 600 W °C °C V~ V~ D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 300 N/A N/A 0.9/6 N/A 10 N/A 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDSS temperature coefficient VDS = VGS, ID = 8mA VGS(th) temperature coefficient VGS= ±20V, VGS = 0V VDS= 0.8 VDSS V VGS= 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % Min. 100 Characteristic Values Typ. Max. 0.077 V %/K 4 -0.183 ±200 V %/K nA mA mA mW Features · International standard packages · Encapsulating ...