HiPerFET Power MOSFET Single MOSFET Die
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
VDSS ID25
RDS(on)
= 100 V = 180 A = 8 mΩ...
Description
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
VDSS ID25
RDS(on)
= 100 V = 180 A = 8 mΩ
trr ≤ 250 ns
Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 100 100 ± 20 ± 30 180 100 720 180 60 3 5 600 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
International standard package Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
rated
Low package inductance Fast intrinsic Rectifier
Applications
Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= ±20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = 0.5 ID25 Note 2
Characte...
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