IXFN230N10

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C TJ = 25°C to 150°C; RGS = 1 MΩ IXFN 230N10 D VDSS ID25 RDS(on) t rr = 100 V = 230 A = 6 mW < 250 ns G S S Maximum Ratings 100 100 ± 20 ± 30 230 100 920 150 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nitride • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low package inductance • Fast intrinsic Rectifier Applications rated isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 TJ = 25°C TJ = 125°C 4.0 ±200 100 2 6 V V nA µA mA mΩ • • • • • DC-DC converters Battery chargers Switched-...