HiPerFET Power MOSFETs Single Die MOSFET
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS V...
Description
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFN 340N07
D
VDSS ID25
RDS(on)
= 70 V = 340 A = 4 mW
G S
trr £ 250ns
S
Maximum Ratings 70 70 ± 20 ± 30 340 100 1360 200 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
International standard packages miniBLOC, with Aluminium nitride
isolation
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated
Low package inductance Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 4 V V nA mA mA mW
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC,...
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