IXFT26N50Q

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 24N50 26N50 24N50 26N50 24N50 26N50 Maximum Ratings 500 500 ± 20 ± 30 24 26 96 104 24 26 30 1.5 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features l l l l 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 24N50Q 26N50Q 25 1 0.23 0.20 V V nA µA mA Ω Ω Unclamped Inductive Switching (UIS) rated l Fast switching l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 ID25 Note 2 Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l Easy to mount Space savings High ...