Power MOSFET
HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 44N60 IXFK 44N60
VDSS ID25
RDS(on)
= 600 V = 44 A = 130 mW
trr £ 250...
Description
HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 44N60 IXFK 44N60
VDSS ID25
RDS(on)
= 600 V = 44 A = 130 mW
trr £ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 600 600 ±20 ±30 44 176 44 60 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g
PLUS 247TM (IXFX)
G
(TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 0.4/6
300
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 130 mW
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighti...
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