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IXGH17N100AU1 Dataheets PDF



Part Number IXGH17N100AU1
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Low VCE(sat) IGBT with Diode High speed IGBT with Diode
Datasheet IXGH17N100AU1 DatasheetIXGH17N100AU1 Datasheet (PDF)

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi Packs Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34.

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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi Packs Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25° C TJ = 125°C 5.5 500 8 ±100 17N100U1 17N100AU1 3.5 4.0 V V µA mA nA V V l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE l AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Advantages l l l Saves space (two devices in one package) Easy to mount (isolated mounting screw hole) Reduces assembly time and cost © 1996 IXYS All rights reserved 91754D (3/96) IXGH 17N100U1 IXGH 17N100AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 15 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 40 100 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 µ H, VCE = 0.8 V CES, RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG Inductive load, TJ = 125° C IC = IC90, VGE = 15 V, L = 300 µ H VCE = 0.8 V CES, RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 17N100U1 17N100AU1 17N100U1 17N100AU1 17N100U1 17N100AU1 17N100AU1 20 60 100 200 500 750 450 3 100 200 2.5 700 1200 750 8 6 1000 2000 1000 1000 750 120 30 90 S pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.83 K/W 0.25 K/W 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 16 120 35 18 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs VR = 540 V TJ = 125 °C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25 °C 1 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 17N100U1 IXGH 17N100AU1 Fig. 1 Saturation Characteristics 35 TJ = 25°C Fig. 2 Output Characterstics VGE = 15V 30 13V 11V 9V 150 T J = 25°C V GE = 15V 13V 125 20 15 10 5 0 0 1 2 3 4 5 6 7 7V IC - Amperes IC - Amperes 25 100 75 50 9V 11V 25 7V 0 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 TJ = 25°C Fig. 4 Temperature Dependence of Output Saturation Voltage 1.4 IC = 34A 1.3 V(sat) - Normalized 1.2 1.1 1.0 0.9 0.8 0.7 0.6 IC = 8.5A IC = 17A VCE - Volts 6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15 IC = 34A IC = 17A IC = 8.5A -50 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 35 VCE= 10V Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 V GE(th) IC = 250µA 30 IC - Amperes 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 T J = 25°C T J = 125°C T J = - 40°C BV / V(th) - Normalized 1.1 1.0 0.9 0.8 0.7 0.6 -50 BVCES IC = 3mA -25 0 25 50 75 100 125 150 VCE - Volts 17N100G1 JNB TJ - Degrees C © 1996 IXYS All rights reserved IXGH 17N100U1 IXGH 17N100AU1 Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area 15 13 11 VCE = 800 IC = 17A IG = 10mA 100 10 IC - Amperes T J = 125°C dV/dt < 3V/ns VGE - Volts 9 7 5 3 1 1 0.1 0.01 0 10 20 30 40 50 60 70 80 90 100 0 200 400 600 800 1000 Gate Charge - (nC) VCE - Volts Fig.9 Capacitance Curves 2000 f = 1MHz 1750 Capacitance - pF 1500 1250 1000 750 500 250 0 0 5 10 15 .


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