Document
VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V
IC25 34 A 34 A
VCE(sat) 3.5 V 4.0 V
Combi Packs
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C
Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W °C °C °C
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Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25° C TJ = 125°C 5.5 500 8 ±100 17N100U1 17N100AU1 3.5 4.0 V V µA mA nA V V
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BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE
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AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages
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Saves space (two devices in one package) Easy to mount (isolated mounting screw hole) Reduces assembly time and cost
© 1996 IXYS All rights reserved
91754D (3/96)
IXGH 17N100U1 IXGH 17N100AU1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 15 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 40 100 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 µ H, VCE = 0.8 V CES, RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG Inductive load, TJ = 125° C IC = IC90, VGE = 15 V, L = 300 µ H VCE = 0.8 V CES, RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 17N100U1 17N100AU1 17N100U1 17N100AU1 17N100U1 17N100AU1 17N100AU1 20 60 100 200 500 750 450 3 100 200 2.5 700 1200 750 8 6 1000 2000 1000 1000 750 120 30 90 S pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.83 K/W 0.25 K/W
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 16 120 35 18 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs VR = 540 V TJ = 125 °C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25 °C
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH 17N100U1 IXGH 17N100AU1
Fig. 1 Saturation Characteristics
35
TJ = 25°C
Fig. 2 Output Characterstics
VGE = 15V
30
13V 11V 9V
150
T J = 25°C V GE = 15V 13V
125
20 15 10 5 0 0 1 2 3 4 5 6 7
7V
IC - Amperes
IC - Amperes
25
100 75 50
9V 11V
25
7V
0
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25°C
Fig. 4 Temperature Dependence of Output Saturation Voltage
1.4
IC = 34A
1.3
V(sat) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 0.6
IC = 8.5A IC = 17A
VCE - Volts
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 34A IC = 17A IC = 8.5A
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
35
VCE= 10V
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
V GE(th) IC = 250µA
30
IC - Amperes
25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10
T J = 25°C T J = 125°C T J = - 40°C
BV / V(th) - Normalized
1.1 1.0 0.9 0.8 0.7 0.6 -50
BVCES IC = 3mA
-25
0
25
50
75
100 125 150
VCE - Volts
17N100G1 JNB
TJ - Degrees C
© 1996 IXYS All rights reserved
IXGH 17N100U1 IXGH 17N100AU1
Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area
15 13 11
VCE = 800 IC = 17A IG = 10mA
100
10
IC - Amperes
T J = 125°C dV/dt < 3V/ns
VGE - Volts
9 7 5 3 1
1
0.1
0.01 0 10 20 30 40 50 60 70 80 90 100 0 200 400 600 800 1000
Gate Charge - (nC)
VCE - Volts
Fig.9 Capacitance Curves
2000
f = 1MHz
1750
Capacitance - pF
1500 1250 1000 750 500 250 0 0 5 10 15 .