High speed IGBT with Diode
Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A...
Description
Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247 AD (IXGH)
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C
Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Features International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
l
l
G
C
E C = Collector TAB = Collector
G = Gate E = Emitter
Mounting torque (M3)
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 25N100U1 25N100AU1 3.5 4.0 V V µA mA nA
l l l l l l
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE
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