IXGT32N60BD1

HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter, Features International standard packages Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 High frequency IGBT and antiparallel FRED in one package High current handling capability HiPerFASTTM HDMOSTM process MOS Gate turn-on -drive simplicity Applications Uninterruptible power supplies (UPS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.0 V V Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE V CE = 0.8 VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V 200 µ A 3 mA ± 100 2.3...