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IXST30N60B Dataheets PDF



Part Number IXST30N60B
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description High Speed IGBT
Datasheet IXST30N60B DatasheetIXST30N60B Datasheet (PDF)

High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability VCES ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maxi.

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High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability VCES ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 55 30 110 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W °C °C °C TO-247 AD (IXSH) (TAB) TO-268 (D3) ( IXST) G S G = Gate S = Source (TAB) TAB = Drain Features l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 100 1 ± 100 30N60B 30N60C 2.0 2.5 V V µA mA nA V V l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 2.5 mA, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V VGE = 15 V; IC = IC90 l l l Easy to mount with 1 screw (isolated mounting screw hole) Surface mountable, high power case style Reduce assembly time and cost High power density © 2001 IXYS All rights reserved 98519B (11/01) IXSH/IXST 30N60B IXSH/IXST 30N60C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 10 3100 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 30 100 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 38 30 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = 4.7 Ω Note 1 30N60B 30N60C 30N60B 30N60C 30N60B 30N60C Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = 4.7 Ω Note 1 30 150 90 140 70 1.5 0.7 35 35 0.5 30N60B 30N60C 30N60B 30N60C 30N60B 30N60C 270 150 250 140 2.5 1.2 270 150 270 120 S pF pF pF nC nC nC ns ns ns ns ns ns 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 2.5 mJ 1.2 mJ ns ns mJ ns ns ns mJ mJ 0.62 K/W TO-268 Outline (TO-247) 0.25 K/W Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXSH/IXST 30N60B IXSH/IXST 30N60C Fig.1 Saturation Characteristics 100 TJ = 25°C Fig.2 Output Characterstics 200 13V TJ = 25°C VGE = 15V VGE = 15V 11V 13V 80 160 IC - Amperes IC - Amperes 11V 9V 60 40 9V 120 80 7V 20 7V 40 5V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 120 TJ = 125°C VGS=15V 13V Fig.4 Temperature Dependence of Output Saturation Voltage 1.6 VGE = 15V IC = 60A 80 60 40 20 11V VCE (sat) - Normalized 100 1.4 1.2 IC = 30A IC - Amperes 1.0 IC = 15A 9V 0.8 0.6 7V 0 0 2 4 6 8 10 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig.5 Input Admittance 140 120 Capacitance - pF Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 10000 f = 1Mhz Ciss VCE = 10V IC - Amperes 100 80 60 40 20 0 4 6 8 10 12 14 16 TJ = 125°C TJ = 25°C 1000 100 Coss Crss 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts © 2001 IXYS All rights reserved IXSH/IXST 30N60B IXSH/IXST 30N60C 1.5 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current TJ = 125°C 7.5 2.0 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG TJ = 125°C E(OFF) IC = 60A 8 RG = 10Ω E(OFF) - milliJoules E(ON) - millijoules E(ON) - millijoules 1.5 1.0 E(ON) 5.0 E(OFF) E(ON) 6 E(OFF) - millijoules 1.0 IC = 30A E(ON) E(OFF) 4 0.5 2.5 0.5 E(ON) IC = 15A E(OFF) 2 0.0 0 20 40 60 0.0 80 0.0 0 0 10 20 30 40 50 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 12 IC =30A VCE = 300V Fig.10 Turn-Off Safe Operating Area 100 IC - Amperes VGE - Volts 10 TJ = 125°C 9 6 3 0 0 25 50 75 100 125 RG = 4.7Ω dV/dt < 5V/ns 1 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 D=0.5 D=0.2 ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IX.


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