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Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 1N100 IXTP 1N100
VDSS ID25
RDS(on)
= 1000 V = 1.5 A = 11 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C
TO-220AB (IXTP)
GD
D (TAB) S
TO-263 AA (IXTA)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C
6 200 3 54 -55 ... +150 150 -55 ... +150
G S D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. 4 300 g °C
Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
International standard packages High voltage, Low RDS (on) HDMOSTM
process
Rugged polysilicon gate cell structure Fast switching times
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 500 11 V V nA µA µA Ω Applications
Switch-mode and resonant-mode
power supplies
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Flyback inverters DC choppers High frequency matching
Advantages
VGS = 10 V, ID = 1.0A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98545A (11/99)
© 2000 IXYS All rights reserved
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IXTA 1N100 IXTP 1N100
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.8 1.5 480 VGS = 0 V, VDS = 25 V, f = 1 MHz 45 15 18 VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A RG = 18Ω, (External) 19 20 18 23 VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 4.5 14 2.3 (IXTP) 0.50 S pF pF pF ns ns ns ns
Dim. Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
TO-263 AA (IXTA) Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 1.0A, pulse test
nC nC nC K/W K/W
A A1 b b2 c c2 D D1 E E1 e
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.5 6 1.8 710 A A V ns
L L1 L2 L3 L4 R
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V
TO-220 AB (IXTP) Outline
Dim. A B C D E F G H J K M N Q R
Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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