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IXTA1N100 Dataheets PDF



Part Number IXTA1N100
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description High Voltage MOSFET
Datasheet IXTA1N100 DatasheetIXTA1N100 Datasheet (PDF)

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD D (TAB) S TO.

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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD D (TAB) S TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 3 54 -55 ... +150 150 -55 ... +150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. 4 300 g °C Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Ÿ International standard packages Ÿ High voltage, Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 500 11 V V nA µA µA Ω Applications Ÿ Switch-mode and resonant-mode power supplies VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Ÿ Flyback inverters Ÿ DC choppers Ÿ High frequency matching Advantages VGS = 10 V, ID = 1.0A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Ÿ Space savings Ÿ High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98545A (11/99) © 2000 IXYS All rights reserved 1-2 IXTA 1N100 IXTP 1N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.8 1.5 480 VGS = 0 V, VDS = 25 V, f = 1 MHz 45 15 18 VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A RG = 18Ω, (External) 19 20 18 23 VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 4.5 14 2.3 (IXTP) 0.50 S pF pF pF ns ns ns ns Dim. Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 TO-263 AA (IXTA) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 1.0A, pulse test nC nC nC K/W K/W A A1 b b2 c c2 D D1 E E1 e Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.5 6 1.8 710 A A V ns L L1 L2 L3 L4 R Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V TO-220 AB (IXTP) Outline Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 .


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