IXTH10P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -500 -500 ± 20 ± 30 10P50 11P50 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -10 -11 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C TO-247 AD (IXTH) D (TAB) TO-268 (IXTT) Case Style G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247) 300 1.13/10 Nm/lb.in. 6 4 g g Features z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25 Advantages z z z Easy to mount...