Power MOSFET. IXTH6N90 Datasheet

IXTH6N90 MOSFET. Datasheet pdf. Equivalent


IXYS Corporation IXTH6N90
Standard
Power MOSFET
IXTH / IXTM 6N90
IXTH / IXTM 6N90A
V
DSS
I
D25
R
DS(on)
900 V 6 A 1.8
900 V 6 A 1.4
N-Channel Enhancement Mode
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
M
d
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
900 V
900 V
±20 V
±30 V
6A
24 A
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
GS D D25
6N90
6N90A
Pulse test, t 300 µs, duty cycle d 2 %
900
2
V
4.5 V
±100 nA
250 µA
1 mA
1.8
1.4
TO-247 AD (IXTH)
TO-204 AA (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91543E(5/96)
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IXTH6N90 Datasheet
Recommendation IXTH6N90 Datasheet
Part IXTH6N90
Description Standard Power MOSFET
Feature IXTH6N90; Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 .
Manufacture IXYS Corporation
Datasheet
Download IXTH6N90 Datasheet




IXYS Corporation IXTH6N90
IXTH 6N90
IXTM 6N90
IXTH 6N90A
IXTM 6N90A
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
46
2600
180
45
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 4.7 Ω, (External)
35 100
40 110
100 200
60 100
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
88 130
21 30
38 70
nC
nC
nC
0.7 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
6A
24 A
1.5 V
900 ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204AA (IXTM) Outline
© 2000 IXYS All rights reserved
Pins
1 - Gate
2 - Source
Case - Drain
Dim. Millimeter
Min. Max.
A 6.4 11.4
A1 3.42
b .97 1.09
D 22.22
e 10.67 11.17
e1 5.21 5.71
L 7.93
p 3.84 4.19
p1 3.84 4.19
q 30.15 BSC
R 13.33
R1 4.77
s 16.64 17.14
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXYS Corporation IXTH6N90
Fig. 1 Output Characteristics
9
8
7 TJ = 25°C
6
5
4
3
2
1
0
0 5 10
VGS = 10V
15 20
7V
6V
25 30
VDS - Volts
Fig. 3 R vs. Drain Current
DS(on)
3.0
TJ = 25°C
2.8
2.6
2.4
VGS = 10V
2.2
VGS = 15V
2.0
1.8
0 2 4 6 8 10
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
6N90A
5
4 6N90
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXTH 6N90
IXTM 6N90
IXTH 6N90A
IXTM 6N90A
Fig. 2 Input Admittance
9
8
7
6
5
TJ = 25°C
4
3
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 2.5A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
BVCES
1.1
VGS(th)
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
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