IXTH75N10

MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR E VGS VGSM ID25 T IDM PD E TJ TJM L Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque O Maximum lead temperature for soldering S 1.6 mm (0.062 in.) from case for 10 s 100 V 100 V ±20 V ±30 V 67N10 75N10 67N10 75N10 67 A 75 A 268 A 300 A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C TO-204 TO-247 TO-268 1.13/10 Nm/lb.in. 18 g 6 g 5 g 10 °C TO-204 AE (IXTM) (TAB) DG TO-268 (IXTT) G G = Gate, S = Source, Features S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier B Symbol Test Conditions O VDSS VGS = 0 V, ID = 250 µA Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 V Applications z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies VGS(th) VDS = VGS, ID = 4 mA 2.0 4V z DC choppers z AC motor control IGSS VGS = ±20 VDC, VDS = 0 ±100 nA z Temperature and lighting controls z Low voltage relays IDSS ...