IXTH7P50

VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C 7P50 8P50 7P50 8P50 7P50 8P50 Maximum Ratings -500 -500 ± 20 ± 30 -7 -8 -28 -32 -7 -8 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C Nm/lb.in. g TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features International standard package Low R HDMOS process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 Low package inductance (<5 nH) - easy to drive and to protect rated Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA Applications VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25 High side switching Push-pull amplifiers DC choppers Automatic test equipment Advantages ...